Source/drain Asymetric Device

a Schematic structure of a device coupled to the sourcedrain

Schematic view of device with additional source and drain implantation

Raised SourceDrain RSD and Vertical Lightly Doped Drain LDD Poly

Inset Switching operation for a symmetric device structure with

Functional characteristics in asymmetric sourcedrain InAlAsSbInGaAs

Raised SourceDrain RSD and Vertical Lightly Doped Drain LDD Poly

Figure 3 from Modeling and Analysis of the Asymmetric SourceDrain

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Raised SourceDrain RSD and Vertical Lightly Doped Drain LDD Poly

Functional characteristics in asymmetric sourcedrain InAlAsSbInGaAs

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Raised SourceDrain RSD and Vertical Lightly Doped Drain LDD Poly

Asymmetric SourceDrain J

a Asymmetric device is depicted diagrammatically b The CV analysis

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Schematic representation of the different sourcedrain extensions a

Device designs used here a Design 1 has seven interchangeable

Functional characteristics in asymmetric sourcedrain InAlAsSbInGaAs

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Figure 1 from SourceDrain Extension Doping Engineering for Variability

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Device structure a schematic of the device with the asymmetric

Figure 3 from An asymmetrical sourcedrain junction structure for SOI

Schematic representation of the different sourcedrain extensions a

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ab Schematic device architecture of symmetric and asymmetric

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Raised SourceDrain RSD and Vertical Lightly Doped Drain LDD Poly

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Schematic flow of the twostep process for recessed SiGe sourcedrain

Figure 2 from Reduction of sourcedrain series resistance and its

Figure 3 from Reduction of sourcedrain series resistance and its

Optical image of the device showing the source drain made of sputtered

a Normalized sourcedrain current IDStI0 of the device whose data

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Figure Asymmetric device in type A defect Left ventriculogram in

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Figure 1 from A selfaligned elevated sourcedrain MOSFET Semantic

Figure 1 from Raised sourcedrain MOSFET with dual sidewall spacers

Figure 2 from A Novel SelfAligned Raised SourceDrain Polysilicon Thin

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a Symmetric device b Configuration 1 Asymmetric device H 2 4H 1

Figure 5 from Asymmetric InGaAsInP MOSFETs With SourceDrain

Figure 3 from SourceDrain Engineering with Ge Large Angle Tilt

a Asymmetric device pseudocapacitive electrode materialAC

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Figure 1 from Improvement of drain leakage current characteristics in

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Optimization of Feedback FET with Asymmetric Source Drain Doping Profile

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Attributes in the Performance and Design Considerations of Asymmetric

Optimization of Feedback FET with Asymmetric Source Drain Doping Profile

Attributes in the Performance and Design Considerations of Asymmetric

A SOI CMOS transistor with asymmetric source and drain diffusions The

a Schematic crosssectional view of gate source and drain contacts

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Modeled drain current lines of an asymmetric MOSFET with different

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A Drain current and B output conductance as a function of drain

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Figure 1 from Analysis of the gatesourcedrain capacitance behavior of

a Illustrations of heterojunction transistors with asymmetric

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Sourcedrain design space analysis A The hardware components used for

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A Drain current and B output conductance as a function of drain

Asymmetrical contact area enables 1st and 3rd quadrant operation

1 Illustration of sourcedrain system An isolated system with a

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The drainsource current Ids as a function of the gate voltage varied

A simple representation of the silicenebased photodetector with

a Schematic of the device Source drain and voltage probe

Comparison between devices with their source and drain regions inverted

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Optimization of Feedback FET with Asymmetric Source Drain Doping Profile

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Output conductance g ds and drain current I D of a symmetric

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Photoelectrical characteristics of the asymmetric device a Structure

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