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Stack up of metal layers in 035 CMOS process Crosssectional view

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Stack up of metal layers in 035 CMOS process Crosssectional view

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The 65nm CMOS technology stack used in this work Inductor windings

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Typical six metal layers CMOS chip environment over the silicon

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SAM for local increase of top metal layer thickness a CMOS

Typical six metal layers CMOS chip environment over the silicon

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